S250 [BL Galaxy Electrical]
GLASS PASSIVATED SILICON BRIDGE RECTIFIERS; 玻璃钝化硅桥式整流器
| 型号： | S250 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | GLASS PASSIVATED SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S40 - - - S500
GALAXY ELECTRICAL
GLASS PASSIVATED SILICON
BL
VOLTAGE RANGE: 80 -- 1000 V
CURRENT: 0.8 A
BRIDGE RECTIFIERS
FEATURES
TO - 269AA
(
)
)
.206 5.21
(
Rating to 1000 V
.195 4.95
(
)
)
.154 3.93
(
.135 344
Low forward voltage drop
Small size,plastic case
Glass passivated junction
Weight: 0.0078 ounces, 0.22grams
Mounting position: Any
.018
1)
( 19)
.075
.
(
0.4
(
)
.065 .16
(
)
)
.029 0.74
(
)
)
.280 7.13
(
.017 0.43
(
.232 5.91
(
96)
.034 0.
(
)
.019 0.48
(4.95)
(4.55)
.195
.170
(
(
70)
.106 2.
)
.090 2.30
(
67)
.105 2.
(
)
.095 2.41
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate current by 20%.
S40
S80
S125 S250 S380 S500 UNITS
VVRMS
VRRM
50
80
110
160
Maximum alternating input voltage
Repetitive peak reverse voltage
170
250
420
600
560
800
700
V
V
1000
Maximum average forward
rectified output current
@Tc= 50
I(AV)
0.8
40
A
Peak forward surge current
8.3ms single half-sine-wave
IFSM
VF
A
V
Maximum forwand voltage drop
1.2
per element at 0.4 A
Maximum reverse current
@TA=25
10.0
A
IR
at rated DC blocking voltage
1.0
60
mA
per element
@TA=100
RθJA
Tj
Thermal resistance junction to ambient air
Operating temperature range
K/W
- 55 --- + 150
- 55 --- + 150
TSTG
Storage temperature range
www.galaxycn.com
Document Number 0287150
1.
BLGALAXY ELECTRICAL
RATINGS AND CHARACTERISTIC CURVES
S40---S500
FIG.1 --FORWARD DERATING CURVE
FIG.2 -- PEAK FORWARD SURGE CURRENT
0.8
RESISTIVE OR INDUCTIVE LOAD
50
0.7
0.6
40
30
TJ=1250C
8.3ms Single Half
sine-wave
0.5
0.4
0.3
20
10
0.2
0.1
0
0
1
10
100
0
25 50
75 100 125 150 175 200
CASE TEMPERATURE,
NUMBER OF CYCLES
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
1
100
0.1
TJ=125
10
TJ=25
1.0
0.1
0.01
PULSE WIDTH=300US
1%DUTYCYCLE
TJ=25
.01
0
20
40
60
80
100
0.001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE
FIG.5 -- TYPICAL JUNCTION CAPACITANCE PERELEMENT
30
25
20
℃
T =25
J
f=1.0MHz
Vsig=50mVp-p
15
10
5.0
0.1
1
4
10
100 110
REVERSE VOLTAGE, VOLTS
www.galaxycn.com
2.
BLGALAXY ELECTRICAL
Document Number 0287150
相关型号：
S250-1A
Bridge Rectifier Diode, 1 Phase, 1A, 600V V(RRM), Silicon, TO-269AA, ROHS COMPLIANT, PLASTIC, MINIDIP-4
DIOTEC
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